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专利名称：Method of manufacturing an MIS electrode发明人：Kraft, Robert,Hattangady, Sunil V.,Grider,
Douglas T.
申请号：EP97309818.9申请日：19971204公开号：EP0847079A3公开日：19991103
专利附图：
摘要：An embodiment of the instant invention is a method of forming a dielectriclayer, the method comprising the steps of: providing a semiconductor substrate(substrate 12), the substrate having a surface; forming an oxygen-containing layer (layer14) on the semiconductor substrate; and subjecting the oxygen-containing layer to anitrogen containing plasma (plasma 16) so that the nitrogen is either incorporated intothe oxygen-containing layer (see regions 18, 19, and 20) or forms a nitride layer at the
surface of the substrate (region 22). Using this embodiment of the instant invention, thedielectric layer can be substantially free of hydrogen. Preferably, the oxygen-containinglayer is an SiO layer or it is comprised of oxygen and nitrogen (preferably an oxynitridelayer). The plasma is, preferably, a high-density plasma. Preferably, a source of nitrogen isintroduced to the plasma to form the nitrogen containing plasma. The source of nitrogenis preferably comprised of a material consisting of: N, NH, N0,NO, or a mixture thereof.
申请人：TEXAS INSTRUMENTS INCORPORATED
地址：13500 North Central Expressway Dallas Texas 75265 US
国籍：US
代理机构：Nettleton, John Victor
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