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专利名称：Arrangement and method for manufacturing
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发明人：Markus Zundel,Andre Schmenn,Damian
Sojka,Isabella Goetz,GudrunStranzl,Sebastian Werner,ThomasFischer,Carsten Ahrens,Edward Fuergut
申请号：US15361108申请日：20161125公开号：US09966277B2公开日：20180508
专利附图：
摘要：An arrangement is provided. The arrangement may include: a substrate having afront side and a back side, a die region within the substrate, a multi-purpose layerdefining a back side of the die region, and an etch stop layer disposed over the multi-purpose layer between the multi-purpose layer and the back side of the substrate. Themulti-purpose layer may be formed of an ohmic material, and the etch stop layer may beof a first conductivity type of a first doping concentration.
申请人：Infineon Technologies AG
地址：Neubiberg DE
国籍：DE
代理机构：Viering, Jentschura & Partner mbB
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