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专利名称:Light emitting diode having transparent
conductive oxide formed on the contactlayer
发明人:Biing-Jye Lee,Ming-Jiunn Jou,Jacob C. Tarn申请号:US08/880590申请日:19970623公开号:US057768A公开日:19980804
摘要:A structure of a light emitting diode (LED) having high brightness is disclosed.This LED includes a substrate formed on a first electrode, a first cladding layer of a firstconductivity type formed on the substrate, an active layer formed on the first claddinglayer, a second cladding layer of a second conductivity type formed on the active layer, awindow layer of the second conductivity type formed on the second cladding layer,wherein the electrical resistivity of the window layer is less than the electrical resistivity ofthe second cladding layer, a contact layer of the second conductivity type formed on thewindow layer for providing ohmic contact, a conductive transparent oxide layer formedon the contact layer, and a current blocking region formed in the LED. The currentblocking region is approximately aligned with a second electrode, and can be the contactlayer having a hollow portion therein, an insulating region formed on the contact layer, anion implanted region in the contact layer and the window layer, or a diffused region in thecontact layer and the window layer.
申请人:EPISTAR CORPORATION
代理机构:Conley, Rose & Tayon, P
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