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专利名称：Integrated circuitry and method of forming
a capacitor
发明人：Vishnu K. Agarwal申请号：US11361111申请日：20060224
公开号：US20060180844A1公开日：20060817
专利附图：
摘要：The invention comprises integrated circuitry and to methods of formingcapacitors. In one implementation, integrated circuitry includes a capacitor having a firstcapacitor electrode, a second capacitor electrode and a high K capacitor dielectric region
received therebetween. The high K capacitor dielectric region has a high K substantiallyamorphous material layer and a high K substantially crystalline material layer. In oneimplementation, a capacitor forming method includes forming a first capacitor electrodelayer over a substrate. A substantially amorphous first high K capacitor dielectric materiallayer is deposited over the first capacitor electrode layer. The substantially amorphoushigh K first capacitor dielectric material layer is converted to be substantially crystalline.After the converting, a substantially amorphous second high K capacitor dielectricmaterial layer is deposited over the substantially crystalline first high K capacitordielectric material layer. A second capacitor electrode layer is formed over thesubstantially amorphous second high K capacitor dielectric material layer.
申请人：Vishnu K. Agarwal
地址：Boise ID US
国籍：US
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