您好,欢迎来到百家汽车网。
搜索
您的当前位置:首页Immunity to inline charging damage in circuit desi

Immunity to inline charging damage in circuit desi

来源:百家汽车网
专利内容由知识产权出版社提供

专利名称:Immunity to inline charging damage in circuit

designs

发明人:Zachary Henderson,Jason D.

Hibbeler,Terence B. Hook,NicholasPalmer,Kirk D. Peterson

申请号:US14707576申请日:20150508公开号:US09378329B1公开日:20160628

专利附图:

摘要:Approaches for checking a design of an integrated circuit using an antenna rule

are provided. A method includes determining a figure of merit for a transistor based on aresistance of a shunt path of the transistor relative to the size of the antenna and the sizeof the transistor. The method also includes comparing the determined figure of merit toa limit. The method further includes deeming the transistor to pass the antenna rulewhen the figure of merit is less than the limit, and deeming the transistor to fail theantenna rule when the figure of merit is greater than the limit. The determining and thecomparing are performed by a computer device.

申请人:INTERNATIONAL BUSINESS MACHINES CORPORATION

地址:Armonk NY US

国籍:US

代理机构:Roberts Mlotkowski Safran & Cole, P.C.

代理人:Steven J. Meyers

更多信息请下载全文后查看

因篇幅问题不能全部显示,请点此查看更多更全内容

Copyright © 2019- baijiahaobaidu.com 版权所有 湘ICP备2023023988号-9

违法及侵权请联系:TEL:199 18 7713 E-MAIL:2724546146@qq.com

本站由北京市万商天勤律师事务所王兴未律师提供法律服务