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专利名称：SILICON SINGLE CRYSTAL WAFER AND
METHOD FOR MANUFACTURING SILICONSINGLE CRYSTAL WAFER, AND METHOD FOREVALUATING SILICON SINGLE CRYSTALWAFER
发明人：Fumio Tahara,Tsuyoshi Ohtsuki,Takatoshi
Nagoya,Kiyoshi Mitani
申请号：US12990038申请日：20090507
公开号：US20110045246A1公开日：20110224
摘要：A method for manufacturing a silicon single crystal wafer, having at least: a stepof preparing a silicon single crystal ingot; a step of slicing the silicon single crystal ingotto fabricate a plurality of sliced substrates; a processing step of processing the pluralityof sliced substrates into a plurality of substrates by performing at least one of lapping,etching, and polishing; a step of sampling at least one from the plurality of substrates; astep of measuring surface roughness of the substrate sampled at the sampling step byan AFM and obtaining an amplitude (an intensity) of a frequency band corresponding to awavelength of 20 nm to 50 nm to make a judgment of acceptance; and a step of sendingthe substrate to the next step if a judgment result is acceptance or performingreprocessing if the judgment result is rejection.
申请人：Fumio Tahara,Tsuyoshi Ohtsuki,Takatoshi Nagoya,Kiyoshi Mitani
地址：Annaka JP,Annaka JP,Annaka JP,Annaka JP
国籍：JP,JP,JP,JP
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