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专利名称:Design data creating method, design data
creating program product, and
manufacturing method of semiconductordevice
发明人:Suigen Kyoh申请号:US11727963申请日:20070329公开号:US07673258B2公开日:20100302
专利附图:
摘要:According to an aspect of the invention, there is provided a design data creating
method of creating design data of a semiconductor device including extracting an ANDregion of an upper layer wiring pattern and a lower layer wiring pattern that sandwich acontact hole layer pattern included in a pattern layer, extracting the contact hole layerpattern included in the AND region, and moving the contact hole layer pattern in such amanner that the center of the AND region coincides with the center of the contact holelayer pattern.
申请人:Suigen Kyoh
地址:Yokohama JP
国籍:JP
代理机构:Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
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