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KST2907AKST2907A
General Purpose Transistor
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
SymbolVCBOVCEOVEBOICPCTSTG
Collector-Base VoltageCollector-Emitter VoltageEmitter-Base VoltageCollector Current
Collector Power DissipationStorage Temperature
Parameter
Value-60-60-5-600350150
UnitsVVVmAmW°C
Electrical Characteristics Ta=25°C unless otherwise noted
SymbolBVCBOBVCEOBVEBOICBOhFE
Parameter
Collector-Base Breakdown Voltage* Collector-Emitter Breakdown VoltageEmitter-Base Breakdown VoltageCollector Cut-off CurrentDC Current Gain
Test Condition
IC= -10µA, IE=0IC= -10mA, IB=0IE= -10µA, IC=0VCB= -50V, IE=0VCE= -10V, IC= -0.1mAVCE= -10V, IC= -1.0mAVCE= -10V, IC= -10mA*VCE= -10V, IC= -150mA*VCE= -10V, IC= -500mAIC= -150mA, IB= -15mAIC= -500mA, IB= -50mAIC= -150mA, IB= -15mAIC= -500mA, IB= -50mAIC= -50mA, VCE= -20Vf=100MHz
VCB= -10V, IE=0, f=1.0MHzVCC= -30V, IC= -150mAIB1= -15mA
VCC= -6V, IC= -150mAIB1=IB2= -15mA
200
850110
7510010010050Min.-60-60-5
-0.01Max.
UnitsVVVµA
300-0.4-1.6-1.3-2.6
VVVVMHzpFnsns
VCE (sat)VBE (sat)fTCobtONtOFF
* Collector-Emitter Saturation Voltage* Base-Emitter Saturation VoltageCurrent Gain Bandwidth ProductOutput CapacitanceTurn On TimeTurn Off Time
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Marking
2F
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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KST2907ATypical CharacteristicsVBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 -10VCE = 10VIC = 10 IBhFE, DC CURRENT GAIN-1VBE(sat)100 -0.1VCE(sat)10-1-10-100-1000-0.01-1-10-100-1000IC[A], COLLECTOR CURRENTIC[mA], COLLECTOR CURRENTFigure 1. DC current GainFigure 2. Collector-Emitter Saturation VoltageBase-Emitter Saturation Voltage 121000 10IE = 0f = 1MHz fT[MHz], CURRENT GAIN BANDWIDTH PRODUCTVCE = -20VCob [pF], CAPACITANCE842 6010-1-10-100-1-10-100-1000VCB [V], COLLECTOR-BASE VOLTAGEIC[mA], COLLECTOR CURRENTFigure 3. Output CapacitanceFigure 4. Current Gain Bandwidth Product©2002 Fairchild Semiconductor CorporationRev. A2, November 2002
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KST2907APackage DimensionsSOT-230.20 MIN2.40 ±0.100.40 ±0.031.30 ±0.100.45~0.600.03~0.100.38 REF0.40 ±0.030.96~1.142.90 ±0.100.12–0.023+0.050.95 ±0.030.95 ±0.031.90 ±0.030.508REF0.97REFDimensions in Millimeters©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTORCORPORATION.As used herein:
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2. A critical component is any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONSDefinition of Terms
Datasheet IdentificationAdvance Information
Product StatusFormative or In DesignFirst Production
Definition
This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.
This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.
Preliminary
No Identification NeededFull Production
ObsoleteNot In Production
©2002 Fairchild Semiconductor CorporationRev. I1
