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专利名称：Method of forming a highly insulative thin
films
发明人：Shigeki Sakai,Kiyoshi Ogata,Tsukasa Hayashi申请号：US07/634528申请日：19901227公开号：US05122483A公开日：19920616
摘要：A method of forming a highly insulative silicon oxide thin film including the stepsof providing a substrate, depositing silicon on the substrate, and injecting an ion beam ofoxygen or a mixed gas consisting of oxygen and an inert gas simultaneously oralternately with the depositing of the silicon. Silicon oxide may be deposited on thesubstrate in combination with the injection of ions of an inert gas. Other metals made bedeposited along with the injection of oxygen or nitrogen cations.
申请人：NISSIN ELECTRIC COMPANY, LIMITED
代理机构：Finnegan, Henderson, Farabow, Garrett & Dunner
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