专利内容由知识产权出版社提供
专利名称：MOS technology power device with low
output resistance and low capacity andrelated manufacturing process
发明人：Frisina, Ferruccio,Ferla, Giuseppe,Rinaudo,
Salvatore
申请号：EP95830468.5申请日：19951106公开号：EP0772244A1公开日：19970507
专利附图：
摘要：A MOS technology power device comprises a plurality of elementary functionalunits, each elementary functional unit comprising a body region (3) of a first conductivitytype formed in a semiconductor material layer (2) of a second conductivity type having afirst resistivity value. Under each body region (3) a respective lightly doped region (20) ofthe second conductivity type is provided having a second resistivity value higher than saidfirst resistivity value.
申请人：CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL
MEZZOGIORNO,SGS-THOMSON MICROELECTRONICS S.r.l.
地址：Stradale Primosole, 50 95121 Catania IT,Via C. Olivetti, 2 20041 Agrate Brianza(Milano) IT
国籍：IT,IT
代理机构：Mittler, Enrico
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