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Plasma-processing apparatus

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专利名称:Plasma-processing apparatus发明人:Yukito Aota,Masahiro Kanai,Atsushi

Koike,Tomokazu Sushihara

申请号:US10745604申请日:20031229公开号:US07582185B2公开日:20090901

专利附图:

摘要:A plasma-processing apparatus having a high frequency power applicationelectrode in which plasma is generated by supplying VHF power to the high frequencypower application electrode. The plasma-processing apparatus has an impedance-

matching equipment comprising a capacitive element and an inductive element, which aremutually connected in series. The apparatus is arranged so that the capacitive elementand the inductive element of the impedance-matching equipment are symmetrical withrespect to the center of the high frequency power application electrode.

申请人:Yukito Aota,Masahiro Kanai,Atsushi Koike,Tomokazu Sushihara

地址:Kanagawa JP,Tokyo JP,Kanagawa JP,Chiba JP

国籍:JP,JP,JP,JP

代理机构:Fitzpatrick, Cella, Harper & Scinto

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