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VISHAYS07B / 07D / 07G / 07J / 07M
Vishay Semiconductors
Small Surface Mount Diodes
Features
• • • •
For surface mounted applicationsLow profile package
Ideal for automated placementGlass passivated
17249 •High temperature soldering:260°C/ 10 seconds at terminals
Mechanical Data
Case: JEDEC -DO219-AB (SMF®) Plastic casePolarity: Band denotes cathode endWeight: approx. 0.01 g
Packaging codes-options:
GS18 - 10 K per 13\" reel (8 mm tape), 50 K/boxGS08 - 3 K per 7\" reel (8 mm tape), 30 K/box
Parts Table
Part
S07BS07DS07GS07JS07M
SBSDSGSJSM
Marking
Absolute Maximum Ratings
Tamb = 25°C, unless otherwise specified
Parameter
Maximum repetitive peak reverse voltage
Test condition
PartS07BS07DS07GS07JS07M
Maximum RMS voltage
S07BS07DS07GS07JS07M
Maximum DC blocking voltage
S07BS07DS07GS07JS07M
Maximum average forward rectified currentT = 75°C1)
tp
TA = 65°C1)
Peak forward surge current 8.3 ms single half sine-wave
1)
SymbolVRRMVRRMVRRMVRRMVRRMVRMSVRMSVRMSVRMSVRMSVDCVDCVDCVDCVDCIF(AV)IF(AV)IFSM
Value10020040060010007014028042070010020040060010001.50.725
UnitVVVVVVVVVVVVVVVAAA
TL = 25°C
Averaged over any 20 ms period
Document Number 85733Rev. 1.8, 24-Mar-04
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Vishay SemiconductorsThermal Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air2)
Operating junction and storage temperature range
2) Mounted on epoxy substrate with 3 x 3 mm CU pads (≥ 40 µm thick)
VISHAYTest conditionSymbolRθJATJ, TSTG
Value180- 55 to + 150
UnitK/W°C
Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Maximum instantaneous forward voltage
1.0 A3)
Test condition
SymbolVFIRIRtrrCj
4
Min
Typ.
Max1.110501.8
UnitVµAµAµspF
Maximum DC reverse current at TA = 25°Crated DC blocking voltage
TA = 125°C
Reverse recovery time
Typical capacitance at 4 V, MHz
3)
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Pulse test: 300 µ pulse width, 1 % duty cycle
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1.21.00.80.60.40.20173751000InstantaneousForwardCurrent(mA)ResistiveorInductiveLoadAverageForwardCurrent(A)TJ=150°CTJ=25°CTJ=100°C3.0x3.0mm40µmThickCopperPadAreas02040608010012014016010060017376AmbientTemperature(jC)InstantaneousForwardVoltage(mV)70080090010001100Fig.1Forward Current Derating CurveFig.2Typical Instantaneous Forward Characteristics
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Document Number 85733
Rev. 1.8, 24-Mar-04
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VISHAYS07B / 07D / 07G / 07J / 07M
Vishay Semiconductors
100InstantaneousReverseCurrent(µA)TJ=150°C10TJ=125°CTJ=100°C1TJ=75°CTJ=50°C0.1TJ=25°C0.01010020030040050060070080090017377InstantaneousReverseVoltage(V)Fig.3Typical Instantaneous Reverse Characteristics
10987C(pF)6543210051015202530354017378VR(V)Fig.4Capacitance vs. Reverse Voltage
Document Number 85733Rev. 1.8, 24-Mar-04
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Vishay SemiconductorsPackage Dimensions in mm
CathodeBandTopViewVISHAY1.8±0.11.0±0.250.98±0.12.8±0.10.05-0.305DetailZenlargedZ0.60±0.250.00-0.103.7±0.21.61.31.417247www.vishay.com4
Document Number 85733
Rev. 1.8, 24-Mar-04
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VISHAYBlistertape for SMF
S07B / 07D / 07G / 07J / 07M
Vishay Semiconductors
PS18513Document Number 85733Rev. 1.8, 24-Mar-04
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Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1.Meet all present and future national and international statutory requirements.
VISHAY2.Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.
1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 85733
Rev. 1.8, 24-Mar-04
