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专利名称：Semiconductor device and capacitance
regulation circuit
发明人：Koichi Sugiyama,Tomoki Inoue申请号：US115169申请日：20061030公开号：US07639061B2公开日：20091229
专利附图：
摘要：According to an embodiment of the invention, there is provided a
semiconductor device comprising: a semiconductor element having a first main electrode,a second main electrode and a control electrode, a current flowing between the first and
second main electrodes being controlled by a control signal which is input between thecontrol electrode and the second main electrode; and a capacitor formed by providing aninsulating layer between the second main electrode and the control electrode of thesemiconductor element.
申请人：Koichi Sugiyama,Tomoki Inoue
地址：Saitama JP,Tokyo JP
国籍：JP,JP
代理机构：Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
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