VSMB2000X01, VSMB2020X01
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, DH
FEATURES
VSMB2000X01 VSMB2020X01
21725-1
DESCRIPTION
VSMB2000X01 series are infrared, 940 nm emitting diodesin GaAlAs (DH) technology with high radiant power and highspeed, molded in clear, untinted plastic packages (with lens)for surface mounting (SMD).
•••••••••••••••
Package type: surface mountPackage form: GW, RGW
Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8AEC-Q101 qualified
Peak wavelength: λp = 940 nmHigh reliability
High radiant powerHigh radiant intensity
Angle of half intensity: ϕ = ± 12°Low forward voltage
Suitable for high pulse current operation
Terminal configurations: gullwing or reserve gullwingPackage matches with detector VEMD2000X01 seriesFloor life: 4 weeks, MSL 2a, acc. J-STD-020
Compliant to RoHS directive 2002/95/EC and inaccordance to WEEE 2002/96/EC
•Halogen-free according to IEC 61249-2-21 definition
•Find out more about Vishay’s Automotive Grade Productrequirements at: www.vishay.com/applicationsAPPLICATIONS
••••••
IrDA compatible data transmissionMiniature light barrierPhotointerruptersOptical switch
Control and drive circuitsShaft encoders
PRODUCT SUMMARY
COMPONENTVSMB2000X01VSMB2020X01
Ie (mW/sr)
4040
ϕ (deg)± 12± 12
λP (nm)940940
tr (ns)1515
Note
Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODEVSMB2000X01VSMB2020X01
Note
MOQ: minimum order quantity
PACKAGINGTape and reelTape and reel
REMARKS
MOQ: 6000 pcs, 6000 pcs/reelMOQ: 6000 pcs, 6000 pcs/reel
PACKAGE FORMReverse gullwing
Gullwing
ABSOLUTE MAXIMUM RATINGS
PARAMETERReverse voltageForward currentPeak forward currentDocument Number: 81930Rev. 1.2, 23-Jul-09
tp/T = 0.5, tp = 100 µsTEST CONDITION
SYMBOL
VRIFIFM
VALUE5100200
For technical questions, contact: emittertechsupport@vishay.comwww.vishay.com
1UNITVmAmA
VSMB2000X01, VSMB2020X01
Vishay SemiconductorsHigh Speed Infrared Emitting Diodes,
940 nm, GaAlAs, DH
ABSOLUTE MAXIMUM RATINGS
PARAMETERSurge forward currentPower dissipationJunction temperatureOperating temperature rangeStorage temperature rangeSoldering temperature
Thermal resistance junction/ambientNote
Tamb = 25 °C, unless otherwise specified
1801201008060TEST CONDITION
tp = 100 µs
SYMBOLIFSMPVTjTambTstg
VALUE1160100- 40 to + 85- 40 to + 100
260250
UNITAmW°C°C°C°CK/W
t ≤ 5 s
J-STD-051, leads 7 mm,
soldered on PCB
TsdRthJA
PV - Power Dissipation (mW)160140120100806040200010203040506070809010021344RthJA = 250 K/WIF - Forward Current (mA)RthJA = 250 K/W40200010203040506070809010021343Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient TemperatureTamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETERForward voltage
Temperature coefficient of VFReverse currentJunction capacitanceRadiant intensityRadiant power
Temperature coefficient of radiant power
Angle of half intensityPeak wavelengthSpectral bandwidth
Temperature coefficient of λpRise timeFall timeCut-off frequencyVirtual source diameter
Note
Tamb = 25 °C, unless otherwise specified
www.vishay.com2
For technical questions, contact: emittertechsupport@vishay.comDocument Number: 81930
Rev. 1.2, 23-Jul-09
IF = 30 mAIF = 30 mAIF = 30 mA
IF = 100 mA, 20 % to 80 %IF = 100 mA, 20 % to 80 %IDC = 70 mA, IAC = 30 mA pp
TEST CONDITIONIF = 100 mA, tp = 20 msIF = 1 A, tp = 100 µs
IF = 1 mAIF = 100 mAVR = 5 V
VR = 0 V, f = 1 MHz, E = 0 mW/cm2
IF = 100 mA, tp = 20 msIF = 1 A, tp = 100 µsIF = 100 mA, tp = 20 ms
IF = 1 mAIF = 100 mA
SYMBOL
VFVFTKVFTKVFIRCJIeIeφeTKφeTKφeϕλpΔλTKλptrtffcd
92020
704040040- 1.1- 0.51± 12940250.251515231.5
96060
MIN.1.15
TYP.1.352.2- 1.8- 1.1
10MAX.1.6
UNITVVmV/KmV/KµApFmW/srmW/srmW%/K%/Kdegnmnmnm/KnsnsMHzmm
VSMB2000X01, VSMB2020X01
High Speed Infrared Emitting Diodes, Vishay Semiconductors
940 nm, GaAlAs, DH
BASIC CHARACTERISTICS
Tamb = 25°C, unless otherwise specified
1000180Ie rel - Relative Radiant Intensity (%)IF = 1 mA160140120IF = 100 mA1008060tp = 20 ms40- 60- 40- 20020406080100IF - Forward Current (mA)10010tp = 100 µstp/T= 0.0011012321534VF - Forward Voltage (V)21444Tamb - Ambient Temperature (°C)Fig. 3 - Forward Current vs. Forward VoltageFig. 6 - Relative Radiant Intensity vs. Ambient Temperature
110VF, rel - Relative Forward Voltage (%)10010810610410210096949290- 40- 20020tp = 20 msIF = 1 mAIF = 100 mAIF = 10 mAΦe rel - Relative Radiant Power (%)908070605040302010084088092096010001040IF = 30 mA4060801002144521443Tamb - Ambient Temperature (°C)λ - Wavelength (nm)Fig. 4 - Relative Forward Voltage vs. Ambient TemperatureFig. 7 - Relative Radiant Power vs. Wavelength
0°100010°20°30°Ie - Radiant Intensity (mW/sr)10040°1.050°0.960°0.870°0.780°0.60.40.201012148710100100021550IF - Forward Current (mA)Fig. 5 - Radiant Intensity vs. Forward CurrentFig. 8 - Relative Radiant Intensity vs. Angular Displacement
Document Number: 81930Rev. 1.2, 23-Jul-09
For technical questions, contact: emittertechsupport@vishay.comwww.vishay.com
3
ϕ - Angular Displacementtp = 100 µstp/T= 0.001Ie rel - Relative Radiant Intensity
VSMB2000X01, VSMB2020X01
Vishay SemiconductorsHigh Speed Infrared Emitting Diodes,
940 nm, GaAlAs, DH
SOLDER PROFILE
300250255 °C240 °C217 °Cmax. 260 °C245 °CDRYPACK
Devices are packed in moisture barrier bags (MBB) toprevent the products from moisture absorption duringtransportation and storage. Each bag contains a desiccant.
Temperature (°C)200max. 30 s150max. 120 s100500050100150200250300max. ramp up 3 °C/smax. ramp down 6 °C/smax. 100 sFLOOR LIFE
Floor life (time between soldering and removing from MBB)must not exceed the time indicated on MBB label: Floor life: 4 weeks
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
DRYING
Time (s)19841Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
In case of moisture absorption devices should be bakedbefore soldering. Conditions see J-STD-020 or label.Devices taped on reel dry using recommended conditions192 h at 40 °C (+ 5 °C), RH < 5 %.
PACKAGE DIMENSIONS in millimeters: VSMB2000
0.4Ø 1.8± 0.10.05 ± 0.1Z2.77 ± 0.21.62.22.25.8 ± 0.22.3 ± 0.2exposed copper0.30.19Z 20:11.1 ± 0.10.52.3 ± 0.20.4CathodePin IDAnode1.70.75Solder pad proposal acc. IPC 7351technical drawingsaccording to DINspecificationsNot indicated tolerances ± 0.1Ø 2.3 ± 0.16.7Drawing-No.: 6.544-5391.02-4Issue: 1; 26.09.0821517 www.vishay.com4
For technical questions, contact: emittertechsupport@vishay.comDocument Number: 81930
Rev. 1.2, 23-Jul-09
0.254
VSMB2000X01, VSMB2020X01
High Speed Infrared Emitting Diodes, Vishay Semiconductors
940 nm, GaAlAs, DH
PACKAGE DIMENSIONS in millimeters: VSMB2020
0.4Ø 1.82.77 ± 0.2X1.60.052.20.192.24.2 ± 0.2exposed copper0.3X 20:12.3 ± 0.20.52.3 ± 0.20.40.6CathodePin IDAnode0.75Solder pad proposal acc. IPC 7351technical drawingsaccording to DINspecificationsNot indicated tolerances ± 0.12.455.15Drawing-No.: 6.544-5383.02-4Issue: 3; 26.09.0821488
Document Number: 81930Rev. 1.2, 23-Jul-09
For technical questions, contact: emittertechsupport@vishay.comwww.vishay.com
5
0.254
VSMB2000X01, VSMB2020X01
Vishay SemiconductorsHigh Speed Infrared Emitting Diodes,
940 nm, GaAlAs, DH
TAPING AND REEL DIMENSIONS in millimeters: VSMB2000
ReelUnreel directionXØ 62± 0.52.5 0.5±Tape positioncoming out from reel6000 pcs/reelØ 330± 1Ø13± 0.5Label posted here12.4± 1.5Technical drawings according to DINspecificationsLeader and trailer tape:Empty (160 mm min.)Parts mountedDirection of pulling outEmpty (400 mm min.)1.75± 0.1Document Number: 81930
Rev. 1.2, 23-Jul-09
Terminal position in tapeDevice Lead I Lead IIVEMT2000Collector EmitterVEMT2500VEMD2000Cathode AnodeVSMB2000Ø 1.55± 0.05IX 2:14 ± 0.12± 0.053.05± 0.1II4 ± 0.1Drawing-No.: 9.800-5100.01-4Issue: X; 29.04.0921572www.vishay.com6
For technical questions, contact: emittertechsupport@vishay.com5.5± 0.05
12± 0.3
VSMB2000X01, VSMB2020X01
High Speed Infrared Emitting Diodes, Vishay Semiconductors
940 nm, GaAlAs, DH
TAPING AND REEL DIMENSIONS in millimeters: VSMB2020
ReelUnreel directionX2.Ø 62± 0.55 0.5±Tape positioncoming out from reel6000 pcs/reelØ 330± 1Ø13± 0.5Label posted here12.4 ± 1.5technical drawings according to DINspecificationsLeader and trailer tape:Empty (160 mm min.)Parts mountedDirection of pulling outEmpty (400 mm min.)1.75± 0.15.5± 0.05
Document Number: 81930Rev. 1.2, 23-Jul-09
For technical questions, contact: emittertechsupport@vishay.comwww.vishay.com
7
Terminal position in tapeDevice Lead I Lead IIVEMT2020VEMT2520VSMB2020Cathode AnodeVEMD2020Collector EmitterØ 1.55± 0.05IX 2:14 ± 0.12 ± 0.053.05 ± 0.1II4± 0.1Drawing-No.: 9.800-5091.01-4Issue: X; 29.04.092157112± 0.3Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained hereinor in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of anyinformation provided herein to the maximum extent permitted by law. The product specifications do not expand orotherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressedtherein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by thisdocument or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unlessotherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in suchapplications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resultingfrom such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regardingproducts designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000Revision: 18-Jul-08
www.vishay.com
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